| PART |
Description |
Maker |
| NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| S34MS01G2 S34MS02G2 S34MS04G2 |
1 Gbit/2 Gbit/4 Gbit SLC NAND Flash for Embedded
|
Cypress Semiconductor
|
| NAND01G-B2B NAND01GR3B2CN6E NAND02GR3B2CN6E NAND01 |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND08GW3B2A NAND04GW3B2AN1E NAND08GW3B2AN1E NAND0 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
Numonyx B.V
|
| RX1.25GBIT/S V23832-T2431-M101 |
PAROLI 2 Tx AC, 1.25 Gbit/s 帕罗2个发送，1.25千兆交流/
Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 1.25 Gbit/s,
|
Infineon Technologies AG
|
| 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4，银
|
http://
Maxwell Technologies, Inc
|
| V23818-N15-L17 V23818-N15-L16 V23818-N15-L353 V238 |
Transceivers by Form-factor MSA - ATM/SDH/SONET, 1300 nm, 2.5 Gbit/s, 2 km, 2x10, LC Connector, collar, active data output if SD low
Transceivers by Form-factor MSA - ATM/SDH/SONET, 1300 nm, 2.5 Gbit/s, 2 km, 2x10, LC Connector, with collar, AC-AC Coupling ext. Temp
Transceivers by Form-factor MSA - ATM/SDH/SONET, 1300 nm, 2.5 Gbit/s, 2 km, 2x10, LC Connector, with collar, DC-DC Coupling ext. Temp
Small Form Factor Single Mode 1300 nm Multirate up to 2.5 Gbit/s Transceiver 2x5/2x10 Pinning with LC?/a> Connector
Small Form Factor Single Mode 1300 nm Multirate up to 2.5 Gbit/s Transceiver 2x5/2x10 Pinning with LC Connector
|
Infineon Technologies AG
|
| V23829-N305-B57 |
SFP MM 2.5 Gbit/s OC-48 Transceiver w...
|
Infineon
|
| FOA1121A1 FOA1122A1 |
1.25 Gbit/s Transimpedance Amplifier
|
Infineon
|
| PM5372 |
40 Gbit/s Transport Switching Element
|
PMC-Sierra, Inc.
PMC[PMC-Sierra Inc]
|
| HYB18T1G160AF |
1 Gbit DDR2 SDRAM 1千兆位DDR2内存
|
Infineon Technologies AG
|
